Chemical and electronic properties of the ITO/Al2O3 interface

Literature Information

Publication Date 2009-03-11
DOI 10.1039/B822848E
Impact Factor 3.676
Authors

Yvonne Gassenbauer, André Wachau, Andreas Klein


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Abstract

The interface formation between transparent conducting Sn-doped indium oxide (ITO) and dielectric aluminium oxide has been studied by photoelectron spectroscopy using in situ sample preparation by magnetron sputtering. The electronic structure including band alignment, changes in Fermi level position and work function is determined. The changes of Fermi level are related to the deposition technique used.

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Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
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