Chemical and electronic properties of the ITO/Al2O3 interface
Literature Information
Yvonne Gassenbauer, André Wachau, Andreas Klein
The interface formation between transparent conducting Sn-doped indium oxide (ITO) and dielectric aluminium oxide has been studied by photoelectron spectroscopy using in situ sample preparation by magnetron sputtering. The electronic structure including band alignment, changes in Fermi level position and work function is determined. The changes of Fermi level are related to the deposition technique used.
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Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.




