Structural characterization and electronic properties of Ni/rubrene bilayers with alternative stacking sequences

Literature Information

Publication Date 2023-02-17
DOI 10.1039/D3CP00297G
Impact Factor 3.676
Authors

Ranganadha Gopalarao Tanguturi, Jian-Chen Tsai, You-Siang Li, Jyh-Shen Tsay


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Abstract

Recent progress in organic electronics has attracted interest due to their excellent characteristics that include photovoltaic, light emission, and semiconducting behaviours. Spin-induced properties play important roles in organic electronics, while introducing spin into an organic layer in which spin responses, such as a weak spin–orbital coupling and long spin-relaxation time, allows a variety of spintronic applications to be achieved. However, such spin responses are rapidly attenuated by misalignment in the electronic structure of hybrid structures. We report herein on the energy level diagrams of Ni/rubrene bilayers that can be tuned by an alternating stacking. The band edges of the highest occupied molecular orbital (HOMO) levels were determined to be 1.24 and 0.48 eV relative to the Fermi level for Ni/rubrene/Si and rubrene/Ni/Si bilayers, respectively. This raises a possibility of accumulating electric dipoles at the ferromagnetic/organic semiconductor (FM/OSC) interface, which would inhibit the transfer of spin in the OSC layer. This phenomenon is caused by the formation of a Schottky-like barrier in the rubrene/Ni heterostructures. According to the information about the band edges of the HOMO levels, schematic plots of the HOMO shift in the electronic structure of the bilayers are presented. Based on the lower value of the effective uniaxial anisotropy for Ni/rubrene/Si, the uniaxial anisotropy was suppressed compared to that of rubrene/Ni/Si. The characteristics of the formation of Schottky barriers at the FM/OSC interface have an impact on the temperature-dependent spin states in the bilayers.

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Source Journal

Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
CiteScore: 5.5
Self-citation Rate: 10.3%
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Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.

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