Study of persistent luminescence and thermoluminescence in SrSi2N2O2:Eu2+,M3+ (M = Ce, Dy, and Nd)

The process of persistent luminescence or glow-in-the-dark, the delayed emission of light of irradiated substances, has long fascinated researchers, who have made efforts to explain the underlying physical phenomenon as well as put it to practical use. However, persistent luminescence is an elusive and difficult process, both in terms of controlling or altering its properties, as well as providing a quantitative description. In this paper, we used SrSi2N2O2:Eu2+ as a model persistent phosphor, characterized by the broad distribution of structural defects and exhibiting long-lasting Eu2+ luminescence that is visible for a few minutes after switching off UV light. We investigated the persistent luminescence process by two complementary methods, namely, thermoluminescence and temperature-dependent persistent luminescence decay measurements. Analysis of experimental data allowed us to determine the depth distribution of traps, and allowed us to distinguish two different mechanisms by which the emission is delayed. The first, the temperature-dependent mechanism, is related to trap activation, while the second, temperature-independent mechanism is related to carrier migration. Finally, we employed the strategy of the co-doping of the phosphor SrSi2N2O2:Eu2+,M3+ (M = Ce, Nd, Dy) to modify the persistent luminescence properties.