One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells‡§

Literature Information

Publication Date 2010-09-13
DOI 10.1039/C0CP00586J
Impact Factor 3.676
Authors

Jia Jia, Kévin Giffard, Kyle Pellarin, Carly Hewson


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Abstract

Herein we report the one-pot electrodeposition of copper indium gallium diselenide, CuIn1−xGaxSe2 (CIGS), thin films as the p-type semiconductor in an ionic liquid medium consisting of choline chloride/urea eutectic mixture known as Reline. The thin films were characterized by scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman microspectroscopy, and UV-visible spectroscopy. Based on the results of the characterizations, the electrochemical bath recipe was optimized to obtain stoichiometric CIGS films with x between 0.2 and 0.4. The chemical activity and photoreactivity of the optimized CIGS films were found to be uniform using scanning electrochemical microscopy and scanning photoelectrochemical microscopy. Low-cost stoichiometric CIGS thin films in one-pot were successfully fabricated.

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