Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals
Literature Information
Wenjuan Huang, Shufen Wang, Xing Cheng, Yanjie Hu, Pooi See Lee
Enhanced electron concentration derived from Ta5+ doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.
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