Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping
Literature Information
Kenneth R. Kort, P. Y. Hung, Patrick D. Lysaght, Wei-Yip Loh, Gennadi Bersuker, Sarbajit Banerjee
We present a Raman spectroscopy study of electron–phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm−1 shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.
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Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.










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