Enhanced long-wavelength transient photoresponsiveness of WO3 induced by tellurium doping
Literature Information
Tungsten trioxide (WO3) films doped with 0.25 atom% tellurium synthesised by a sol–gel route, show strong transient photocurrents under chopped sub-bandgap illumination (hν = 1.8 eV < Eg) at low bias potentials from 0.2 to 0.7 V; such effects are ascribed to the presence of a localized narrow band (NB) between the VB and the CB in this material.
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