A graphene/Janus B2P6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field
Literature Information
Tian Xie, Youyou Guo, Gang Yuan, JiaJun Liao, Nan Ma, Chuyun Huang
Lowering the Schottky barrier at the metal–semiconductor interface remains a stern challenge in the field of field-effect transistors. Herein, an in-depth investigation was conducted to explore the formation mechanism of the Schottky barrier via interlayer distance and external electric field, utilizing the first-principles approach. Attributed to the vertical asymmetric structure of B2P6, ohmic contact forms at the interface of a graphene/B2P6(001) heterostructure, and an n-type Schottky contact with a Schottky barrier of 0.51 eV forms at the interface of a graphene/B2P6(00) heterostructure. Furthermore, the Schottky barrier height and the contact type can be changed by adjusting the interlayer spacing or applying an electric field along the Z direction. A high carrier concentration of 4.65 × 1013 cm−2 is obtained in the graphene/B2P6(001) heterostructure when an external electric field of 0.05 V Å−1 is applied. Verifiably, alterations in the energy band structure are attributed to the redistribution of charges at the interface. The new findings indicate that GR/B2P6 heterostructures are a key candidate for next-generation Schottky field-effect transistor development.
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