Engineering work function of graphene oxide from p to n type using a low power atmospheric pressure plasma jet

Literature Information

Publication Date 2020-01-23
DOI 10.1039/C9CP06174F
Impact Factor 3.676
Authors

Avishek Dey, Paheli Ghosh, James Bowen, Nicholas St. J. Braithwaite, Satheesh Krishnamurthy


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Abstract

In this work, we demonstrate doping graphene oxide (GO) films using a low power atmospheric pressure plasma jet (APPJ) with subsequent tuning of the work function. The surface potential of the plasma functionalized GO films could be tuned by 120 ± 10 mV by varying plasma parameters. X-ray spectroscopy used to probe these changes in electronic structure of systematically functionalized GO films by plasma. Detailed investigation using X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure spectroscopy revealed the reactive nitrogen species in the plasma induce finite changes in the surface chemistry of the GO films, introducing additional density of states near the top of the valence band edge. Nitrogen introduced by the atmospheric pressure plasma is predominantly in a graphitic configuration with a varying concentration of pyridinic nitrogen. Additionally, evidence of gradual de-epoxidation of these GO films with increasing plasma exposure was also observed. We attribute this variation in work function values to the configuration of nitrogen in the graphitic structure as revealed by X-ray spectroscopy. With pyridinic nitrogen the electronic states of GO became electron deficient, inducing a p-type doping whereas an increase in graphitic nitrogen increased the electron density of GO leading to an n-type doping effect. Nitrogen doping was also found to decrease the resistivity from 138 MΩ sq−1 to 4 MΩ sq−1. These findings are extremely useful in fabricating heterojunction devices like sensors and optoelectronic devices where band structure alignment is key to device performance when GO is used as a charge transport layer. This technique can be extended to other known 2D systems.

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Source Journal

Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
CiteScore: 5.5
Self-citation Rate: 10.3%
Articles per Year: 3036

Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.

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