Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors

Literature Information

Publication Date 2015-05-28
DOI 10.1039/C5NR02019K
Impact Factor 7.79
Authors

Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, Dae Joon Kang


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Abstract

Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 105 times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

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Nanoscale

Nanoscale
CiteScore: 12.1
Self-citation Rate: 5.2%
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Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers. Highly interdisciplinary, Nanoscale appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics. For publication in Nanoscale, papers must report high-quality reproducible new work that will be of significant general interest to the journal's wide international readership. Nanoscale is a collaborative venture between the Royal Society of Chemistry Publishing and a leading nanoscience research centre, the National Center for Nanoscience and Technology (NCNST) in Beijing, China. image block The journal publishes weekly issues, complementing and building on the nano content already published across the Royal Society of Chemistry Publishing journal portfolio. Since its launch in late 2009, Nanoscale has established itself as a platform for high-quality, cross-community research that bridges the various disciplines involved with nanoscience and nanotechnology, publishing important research from leading international research groups.

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