Scaling of anomalous Hall effects in facing-target reactively sputtered Fe4N films

Literature Information

Publication Date 2015-05-13
DOI 10.1039/C5CP01955A
Impact Factor 3.676
Authors

Y. Zhang, W. B. Mi, X. C. Wang, X. X. Zhang


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Abstract

The anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive over the entire temperature range. The magnetization, carrier density and grain boundary scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of ρAH ∝ ργxx is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ > 2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ > 2 is not expected in homogenous epitaxial systems. We demonstrated that γ > 2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.

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Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
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