Materials Science in Semiconductor Processing

Basic Information

Brief Name: MAT SCI SEMICON PROC
Impact Factor: 4.2
ISSN: 1369-8001
Research Field: ENGINEERING TECHNOLOGY
h-index: 49
Self-citation Rate: 4.8%
Articles per Year: 635

SCI Index Status: Science Citation Index Expanded
Journal Website: https://www.sciencedirect.com/journal/materials-science-in-semiconductor-processing
Journal Introduction:

Functional Materials for (Opto)electronics, Sensors, Detectors, and Green Energy. Materials Science in Semiconductor Processing Mrovides a unique forum for the discussion of novel processing, applications, and theoretical studies of functional semiconductor materials and devices. Each issue aims to provide a snapshot of current insights, new achievements, breakthroughs, perspectives, and future trends in material sciences for such diverse fields as advanced electronics and opto-electronics, sensors and detectors, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film deposition and growth technology, hybrid and quantum materials, device fabrication technology, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography, etching, doping, annealing, and thin film processing for submicron and nano devices; material and device failure, reliability, damage evolution, and related issues; advanced chemical and physical vapor deposition; advanced metallization and interconnect schemes; compound semiconductor materials and processing; new dielectrics and non-oxide materials and their applications; (macro)molecular, hybrid, heterostructure, and quantum materials, devices, and processing; molecular dynamics, ab-initio methods, Monte Carlo simulations, data intensive and machine-learning based approaches, etc.; new materials and processes for discrete and integrated circuits; advanced electronic packaging materials and processes; magnetic materials and spintronics; crystal growth technology and mechanism; intrinsic impurities and defects of materials. Pure device simulation and modelling without connection to experiment is not within the aim and scope of this journal. Submit your manuscript

CiteScore

CiteScore
8
SJR
0.732
SNIP
0.992
Subject Rank Percentile
EngineeringMechanical Engineering
87 / 672 87%

Journal Statistics

Bimonthly
Issues/Year
Time to first decision: 2days Review time: 96days Submission to acceptance: 117days Acceptance to publication: 10days
Review Cycle
$3060
Article Processing Fee

Submission Information

Submission Website:

https://www.editorialmanager.com/mssp/default.aspx

Accepted Types:

Original research papers, reviews, letters to the editor.

Related Articles

Back cover

Cover

DOI: 10.1039/C5CP90014J

Concentration effects on intrachain polaron recombination in conjugated polymers

Luiz Antonio Ribeiro Junior, Wiliam Ferreira da Cunha, Antonio Luciano de Almeida Fonseca, Ricardo Gargano, Geraldo Magela e Silva

2014-11-18 Paper

DOI: 10.1039/C4CP04514A

Growth of axial nested P–N heterojunction nanowires for high performance diodes

Nan Chen, Zheng Xue, Hui Yang, Zhou Zhang, Juan Gao, Yongjun Li, Huibiao Liu

2014-11-25 Paper

DOI: 10.1039/C4CP04397A

Dirac fermions in silicene on Pb(111) surface

Agata Podsiadły-Paszkowska, Mariusz Krawiec

2014-12-01 Paper

DOI: 10.1039/C4CP05104A

Photo-induced dynamics of the heme centers in cytochrome bc1

Adrien A. P. Chauvet, André Al Haddad, Wei-Chun Kao, Frank van Mourik, Carola Hunte, Majed Chergui

2014-11-28 Paper

DOI: 10.1039/C4CP04805A

Electronic structure aspects of the complete O2 transfer reaction between Ni(ii) and Mn(ii) complexes with cyclam ligands

Jhon Zapata-Rivera, Rosa Caballol, Carmen J. Calzado

2014-12-05 Paper

DOI: 10.1039/C4CP05127K

Effects of 3d transition-metal doping on electronic and magnetic properties of MoS2 nanoribbons

Xiaoqing Tian, Lin Liu, Yu Du, Juan Gu, Jian-bin Xu, Boris I. Yakobson

2014-11-26 Paper

DOI: 10.1039/C4CP04579C

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