Inorganic structures as materials for gas sensors
Literature Information
Publication Date
DOI
10.1070/RC2004v073n10ABEH000921
Impact Factor
0
Authors
Roman B. Vasiliev, Ludmila I. Ryabova, Marina N. Rumyantseva, Alexander M. Gaskov
View Original
Abstract
Studies concerned with the design of new inorganic materials for gas sensors based on semiconductor structures are analysed. The influence of adsorbed molecules on the electronic state and electrical conductivity of the surface and inner interfaces in semiconductor materials is discussed. The mechanism of gas sensitivity is considered taking metal/insulator/semiconductor, semiconductor/insulator/semiconductor, metal/semiconductor, and semiconductor/semiconductor structures as examples. Specific features of the behaviour of heterostructures based on nanocrystalline metal oxides on single-crystalline silicon substrates with a SiO2 dielectric layer are pointed out. The sensor properties of semiconductor structures in the detection of various molecules are described. The bibliography includes 114 references.
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Source Journal
Russian Chemical Reviews
CiteScore:
13
Self-citation Rate:
4.3%
Articles per Year:
37
Founded in 1932, Russian Chemical Reviews aims to publish timely and important review articles covering most aspects of modern chemistry, including: Chemical physics Physical chemistry Computational and theoretical chemistry Catalysis Coordination chemistry Analytical chemistry Organic, organometallic and organoelement chemistry Chemistry of macromolecules Applied chemistry Biochemistry, bio-organic chemistry and biomolecular chemistry Medicinal chemistry Materials chemistry, nanochemistry, nanostructures Environmental chemistry
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