Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

Literature Information

Publication Date 2015-10-08
DOI 10.1039/C5CP05481H
Impact Factor 3.676
Authors

Yanmei Sun, Fengjuan Miao, Rui Li, Dianzhong Wen


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Abstract

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated. The current–voltage characteristics of the fabricated devices show different electrical conductance behaviors, such as the write-once read-many-times (WORM) memory effect, the rewritable flash memory effect and insulator behavior, which depend on the content of PBD in the PVP + PBD composites. The OFF and ON states of the WORM and rewritable flash memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.

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Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
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