An organic p-type dopant with high thermal stability for an organic semiconductor
Literature Information
Zhi Qiang Gao, Gui Zhen Xu, Yi Qian Wan, Meng Lian Gong, Chin H. Chen
To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.
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