IEEE Transactions on Device and Materials Reliability

Basic Information

Brief Name: IEEE T DEVICE MAT RE
Impact Factor: 2.5
ISSN: 1530-4388
Research Field: ENGINEERING TECHNOLOGY
h-index: 63
Self-citation Rate: 4%
Articles per Year: 72

SCI Index Status: Science Citation Index Expanded
Journal Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Journal Introduction:

IEEE Transactions on Device and Materials Reliability includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectations. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.

CiteScore

CiteScore
4.8
SJR
0.436
SNIP
1.148
Subject Rank Percentile
EngineeringSafety, Risk, Reliability and Quality
65 / 207 68%

Journal Statistics

Quarterly
Issues/Year
Review Cycle
Article Processing Fee

Submission Information

Submission Website:

http://mc.manuscriptcentral.com/tdmr

Related Articles

Computational simulation and interpretation of the low-lying excited electronic states and electronic spectrum of thioanisole

Shaohong L. Li, Xuefei Xu, Donald G. Truhlar

2015-06-05 Paper

DOI: 10.1039/C5CP02461G

Effect of cobalt doping on the structural, magnetic and abnormal thermal expansion properties of NaZn13-type La(Fe1−xCox)11.4Al1.6 compounds

Rongjin Huang, Wei Wang, Zheshuai Lin, Jiangtao Li, Laifeng Li

2016-07-01 Communication

DOI: 10.1039/C6CP03221D

Interlayer coupling in two-dimensional titanium carbide MXenes

Chao Zhang, Jingyang Wang, Xiaohui Wang

2016-05-16 Communication

DOI: 10.1039/C6CP01699E

The ferroelectric polarization of Y2CoMnO6 aligns along the b-axis: the first-principles calculations

C. Y. Ma, S. Dong, P. X. Zhou, Z. Z. Du, M. F. Liu, H. M. Liu, Z. B. Yan

2015-07-02 Paper

DOI: 10.1039/C5CP02501J

Light-induced water splitting by titanium-tetrahydroxide: a computational study

Andranik Kazaryan, Rutger van Santen, Evert Jan Baerends

2015-07-13 Paper

DOI: 10.1039/C5CP01812A

Does Hooke's law work in helical nanosprings?

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2015-07-20 Paper

DOI: 10.1039/C5CP02802G

Excited states in large molecular systems through polarizable embedding

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2016-07-06 Perspective

DOI: 10.1039/C6CP03834D

Fluorescence switching of sanguinarine in micellar environments

Sagar Satpathi, Krishna Gavvala, Partha Hazra

2015-07-20 Paper

DOI: 10.1039/C5CP02818C

Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide

Dang Xuan Long, Yong Xu, Huai-xin Wei, Yong-Young Noh

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Coupling effect between the structure and surface characteristics of electrospun carbon nanofibres on the electrochemical activity towards the VO2+/VO2+ redox couple

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