IEEE Transactions on Device and Materials Reliability
Basic Information
IEEE Transactions on Device and Materials Reliability includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectations. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
CiteScore
| Subject | Rank | Percentile |
|---|---|---|
EngineeringSafety, Risk, Reliability and Quality |
65 / 207 | 68% |
Journal Statistics
Submission Information
Submission Website:
http://mc.manuscriptcentral.com/tdmrRelated Articles
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Effect of cobalt doping on the structural, magnetic and abnormal thermal expansion properties of NaZn13-type La(Fe1−xCox)11.4Al1.6 compounds
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DOI: 10.1039/C6CP03221D
Interlayer coupling in two-dimensional titanium carbide MXenes
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The ferroelectric polarization of Y2CoMnO6 aligns along the b-axis: the first-principles calculations
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Excited states in large molecular systems through polarizable embedding
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Fluorescence switching of sanguinarine in micellar environments
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DOI: 10.1039/C5CP02818C
Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide
Dang Xuan Long, Yong Xu, Huai-xin Wei, Yong-Young Noh
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Coupling effect between the structure and surface characteristics of electrospun carbon nanofibres on the electrochemical activity towards the VO2+/VO2+ redox couple
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