The oxidation kinetics of thin nickel films between 250 and 500 °C
Literature Information
Y. Unutulmazsoy, R. Merkle, D. Fischer, J. Mannhart, J. Maier
The oxidation kinetics of thin polycrystalline Ni films is of fundamental interest as well as being relevant for potential applications. It was investigated between 250 and 500 °C for 10–150 nm thick films. Even for the thinnest films, oxidation was found to be diffusion controlled. The high density of grain boundaries in the formed NiO layer leads to a tracer diffusion coefficient that is higher than reported in the literature, indicating accelerated Ni diffusion along the grain boundaries. Cr segregation to the bottom interface in doped-NiO films hindered the acceleration of the oxidation of thin films.
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