The oxidation kinetics of thin nickel films between 250 and 500 °C

Literature Information

Publication Date 2017-03-17
DOI 10.1039/C7CP00476A
Impact Factor 3.676
Authors

Y. Unutulmazsoy, R. Merkle, D. Fischer, J. Mannhart, J. Maier


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Abstract

The oxidation kinetics of thin polycrystalline Ni films is of fundamental interest as well as being relevant for potential applications. It was investigated between 250 and 500 °C for 10–150 nm thick films. Even for the thinnest films, oxidation was found to be diffusion controlled. The high density of grain boundaries in the formed NiO layer leads to a tracer diffusion coefficient that is higher than reported in the literature, indicating accelerated Ni diffusion along the grain boundaries. Cr segregation to the bottom interface in doped-NiO films hindered the acceleration of the oxidation of thin films.

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Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
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