Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

Literature Information

Publication Date 2015-08-19
DOI 10.1039/C5CP03360H
Impact Factor 3.676
Authors

Manju Bala, Compesh pannu, Srashti Gupta, Tripurari S. Tripathi, Surya K. Tripathi, K. Asokan, Devesh K. Avasthi


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Abstract

An investigation was carried out to understand the phase evolution and study the structural, morphological, optical and electrical properties of Co–Sb alloys fabricated by two different approaches: (a) thermal annealing and (b) ion-beam mixing followed by post annealing. The as-deposited and 100 MeV Ag ion beam irradiated Co/Sb bilayer thin films were subjected to thermal annealing from 200 to 400 °C for 1 hour. The Rutherford backscattering spectrometry (RBS) results showed partial mixing for the thermally annealed films and complete mixing for the irradiated and post annealed films at 400 °C. The XRD and RAMAN measurements indicated the formation of Co–Sb alloy, with ∼70% concentration of CoSb3 phase in the irradiated post annealed sample at 400 °C. The band gaps of the annealed and post irradiated annealed Co–Sb alloys were determined using UV-visible spectroscopy. Electrical and thermoelectric power measurements were performed in the temperature range of 300–420 K. It was observed that the alloys formed by ion-beam induced mixing exhibited higher electrical conductivity and thermoelectric power than the as-deposited and thermally annealed Co/Sb bilayer thin films.

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Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
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